Exploration of 3D Nanoscale Image Sensor to Enable Logic and Sensing in Single Chip
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Abstract
Nanowire photodetectors have been attracting and gained increased attention due to their potential for very high sensitivity detection. Silicon photodetectors are of particular interest due to their low cost, ease of processing and ability for integration with conventional fabrication techniques. In this work the detailed approach on how to fabricate the simple photo detector is shown. We have explored new Horizontal HgCdTe junction less Nanowire transistor based Image sensor. If we can realize this kind of new 3D image sensor device then they can be integrated seamlessly in 3D image sensor circuitry. Simulation of fabrication steps for HgCdTe based Nanowire Image sensor has been performed in TCAD Synopsys Sentaurus tools. Using the Raytracing optical physics model, the optical response of the Nanowire Image sensor is simulated and photo-current response is observed. The measured optical generation and efficiency have been compared with PN Junction Photo detector and vertical Nanowire Image sensor for the same given device length and material. The efficiency of horizontal junction less nanowire transistor is found to be better than conventional designs. We then propose a 3D architecture which integrates sensing circuit and logic in same die. The entire simulation has been carried out on Synopsys Sentaurus process and Sentaurus Device tools.
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Introduction -- Simulations of PN photodiode and vertical nanowire PIN photodiode -- Nanowire as photodetector -- TCAD simulations ofnanowire as photodetector -- Future directions and conclusion
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M.S.