The transverse thermoelectric power in tellurium films
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"Thermoelectric phenomena were first observed more than a century ago.1.1,1.2 Since that time a vast amount of progress has been made in understanding the thermodynamic and electronic principles which govern these phenomena. Most of the early thermoelectric research work in semiconducting materials was oriented towards optimising the parameters for direct conversion of heat to electrical power or for using electrical power to pump heat. Often overlooked is the insight into the nature of semiconduction processes which has been gained as a result of using the thermoelectric effects, particularly the Seebeck effect, as an experimental tool. One of the most frequently used experimental techniques to determine carrier concentration type in semiconductors is the thermal probe. This technique consists of placing a heated metal probe on the surface of a semiconductor to which another large area ohmic contact has been made. Charge carriers will diffuse from the region of the hot probe under the influence of a carrier concentration and kinetic energy gradient. Equilibrium is restored by the gradient in electrostatic potential which results from the average increase in majority carriers in the cooler regions of the semiconductor. The potential of the hot probe relative to the cooler contact will have a sign depending on the majority carrier type--negative for p-type and positive for n-type. While conceptually very simple, this technique is quite complicated in terms of the physical processes taking place in the semiconductor, and frequently erroneous results are obtained with its use."--Introduction.
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