Facile method for chemical vapor deposition of graphene under industrially safe conditions
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An experimental study was conducted to evaluate graphene deposition using a simple APCVD system. Low-cost Cu foil served as the catalytic substrate, facilitating graphene growth via methane decomposition at 1030 [degrees] C. Gas concentrations were maintained below their lower explosive limit to ensure safe processing conditions suitable for industrial production. An engineering approach was employed to enhance deposition quality and efficiency by increasing the deposition rate through optimized gas-phase fluid dynamics. Minimal Cu foil pre-treatment was implemented to support industrial-scale graphene growth using R2R manufacturing. The effects of various annealing times and backside oxidation of Cu foil were examined as a method for producing high-quality graphene efficiently. Results indicated the deposition of SLG, BLG, and FLG of varying quality across all samples. Higher hydrogen etching effects were noted for graphene flakes with more layers. Sample S8-BSO yielded the highest-quality single-layer graphene films, as evidenced by Raman peak intensities (I2D/IG [greater than or equal to] 2) and SEM imaging.
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M.S.