Pulse Generation, Shaping, and Optimization Solutions for Solid-State-Switch-Enabled High-Power Microwave Generation Systems
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Abstract
This work presents an ensemble of solid-state pulse power solutions and approaches for the compact and light-weight ultrawideband high-power microwave (HPM) application space. The semiconductor-based foundation overcomes limitations in terms of jitter and narrow bandwidth found in traditional HPM technologies. In the pulse generation space, (i) material-level evaluation of photoconductive solids in light of optoelectronic switching through a new figure of merit (FOM), (ii) device-level silicon photoconductive solid-state switch (Si-PCSS) pulse recovery and leakage currents at a device-level as a function of sub-bandgap defect profiles, and (iii) circuit-level development of a MOSFET-switched microwave frozen wave generator (FWG) have been comprehensively studied. Additionally, nonlinear pulse shaping networks such as D-NLTLs in pulsed and continuous wave excitation modes are comprehensively studied in the pulse shaping space. The derived FOM evaluates photoconductive solids based on power dissipation and temperature rise-rates, simplifying the high-degree-of-freedom parameter optimization of the source driver. The study of the proton irradiation effects on Si-PCSS carrier lifetime reduction provides an insight into recovery time reduction, and the MOSFET-switched FWG with chirp-capability and dynamic-tunability provides a solid-state alternative for microwave pulsers. Furthermore, the D-NLTLs demonstrated in pulsed and CW modes provide a compact pulse shaping network capable of generating UHF frequencies with MW-order peak power.
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Introduction -- HPM system fundamentals -- Photoconductive solid-state switch figure of merit -- Effects of proton irradiation on Si-PCSS transient parameters -- Frozen wave generator -- Continuous wave diode-based nonlinear transmission lines -- Future work
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Ph.D. (Doctor of Philosophy)