Browsing by Author/Contributor "Ramdas, A. K."

Now showing items 1-5 of 5

  • Electronic transitions in CdTe under pressure 

    Prakash, Maneesha; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.; Miotkowski, I.; Ramdas, A. K. (American Physical Society, 1990)
    We present a photoluminescence study of CdTe:Sb at 5 and 15 K under hydrostatic pressures of 0 to 32 kbar. We determine the pressure coefficients of several electronic transitions: the neutral-acceptor-bound exciton A0X, ...

  • Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study 

    Guha, Suchi; Cai, Qingsheng, 1966-; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.; Hyunjung, Kim; Alvarenga, A. D.; Vogelgesang, R.; Ramdas, A. K.; Melloch, M. R. (American Physical Society, 1998)
    The temperature and pressure dependence of type-I and -II transitions from photoluminescence (PL) spectra in a series of (GaAs)m/(AlAs)m superlattices show that the temperature dependence of energy bands can be described ...

  • Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study 

    Boley, Mark S. (Mark Seymour), 1967-; Thomas, Robert J. (Robert James), 1967-; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Institute of Physics, 1993)
    The heavy‐hole and light‐hole excitons of a CdTe epilayer, pseudomorphically grown on an InSb epilayer by molecular beam epitaxy, are studied with a diamond anvil cell as a function of applied hydrostatic pressure via ...

  • Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer) 

    Rockwell, Benjamin A.; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Physical Society, 1991)
    The heavy-hole and light-hole excitons of a pseudomorphic ZnSe film grown on a GaAs epilayer by molecular-beam epitaxy, are studied as a function of applied hydrostatic pressure using photomodulated reflectance spectroscopy. ...

  • Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer) 

    Thomas, Robert J. (Robert James), 1967-; Rockwell, Benjamin A.; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Institute of Physics, 1995)
    A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via ...