Browsing by Author/Contributor "Thomas, Robert J. (Robert James), 1967-"

Now showing items 1-4 of 4

  • Hydrostatic-pressure studies of confined transitions in cubic Zn1-xCdxSe/ZnSe strained-layer quantum wells 

    Thomas, Robert J. (Robert James), 1967-; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Samarth, N.; Luo, H.; Furdyna, J. (American Physical Society, 1992)
    Photoluminescence spectra of cubic Zn0.82Cd0.18Se quantum wells of widths 30, 60, and 200 Å are studied as a function of hydrostatic pressure (0-60 kbar) at 80 K. The pressure coefficients of heavy-hole excitons are found ...

  • Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study 

    Boley, Mark S. (Mark Seymour), 1967-; Thomas, Robert J. (Robert James), 1967-; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Institute of Physics, 1993)
    The heavy‐hole and light‐hole excitons of a CdTe epilayer, pseudomorphically grown on an InSb epilayer by molecular beam epitaxy, are studied with a diamond anvil cell as a function of applied hydrostatic pressure via ...

  • Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure 

    Thomas, Robert J. (Robert James), 1967-; Boley, Mark S. (Mark Seymour), 1967-; Chandrasekhar, Meera; Chandrasekhar, Holalkere R. (American Physical Society, 1994)
    The piezomodulated-, electromodulated-, and photomodulated-reflectivity spectra of a pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular-beam epitaxy, exhibit heavy- and light-hole excitonic signatures split ...

  • Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer) 

    Thomas, Robert J. (Robert James), 1967-; Rockwell, Benjamin A.; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Institute of Physics, 1995)
    A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via ...