Browsing by Title "Effect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFET"
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Effect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFET
(University of Missouri--Columbia, 2006)[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] A 3-D silicon nanowire wrap around gate (WAG) MOSFET was designed and it was shown that the properties of the cylindrical channel silicon nanowire ...