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Improved contact design for the SiC photo-switch used in high power applications
(University of Missouri--Columbia, 2007)
Silicon Carbide (SiC) has a bulk dielectric strength of 3000 kV/cm, thermal conductivity of 4.9 W/(cm-K), and high tensile strength. It is considered the most promising photo-switching material that can enable the fielding of the most compact pulse...