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    Spin accumulation from interlayer scattering in semiconductor bilayers

    Glazov, M. M.
    Semina, M. A.
    Badalyan, S. M.
    Vignale, Giovanni, 1957-
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    [PDF] Article (387.7Kb)
    Date
    2011
    Format
    Article
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    Abstract
    Electrons in double-layer semiconductor heterostructures experience two types of spin- orbit interaction: one arises within each layer from the lack of bulk inversion symmetry and/or externally applied electric fields; the other arises from the electric field created by electron density fluctuations in the other layer. We show how these two interactions, acting in a concerted manner, produce spin accumulation in one layer when a current is driven in the other. This accumulation has the same temperature dependence (~T^2) as the recently described spin Hall drag accumulation, but it is parametrically stronger in the clean limit.
    URI
    http://hdl.handle.net/10355/10017
    Citation
    arXiv:1102.1415v1
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    • Physics and Astronomy publications (MU)

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