Spin accumulation from interlayer scattering in semiconductor bilayers

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Spin accumulation from interlayer scattering in semiconductor bilayers

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/10017

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Title: Spin accumulation from interlayer scattering in semiconductor bilayers
Author: Glazov, M. M.; Semina, M. A.; Badalyan, S. M.; Vignale, Giovanni, 1957-
Date: 2011-02-07
Publisher: arXiv
Citation: arXiv:1102.1415v1
Abstract: Electrons in double-layer semiconductor heterostructures experience two types of spin- orbit interaction: one arises within each layer from the lack of bulk inversion symmetry and/or externally applied electric fields; the other arises from the electric field created by electron density fluctuations in the other layer. We show how these two interactions, acting in a concerted manner, produce spin accumulation in one layer when a current is driven in the other. This accumulation has the same temperature dependence (~T^2) as the recently described spin Hall drag accumulation, but it is parametrically stronger in the clean limit.
URI: http://hdl.handle.net/10355/10017

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