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dc.contributor.authorGlazov, M. M.eng
dc.contributor.authorSemina, M. A.eng
dc.contributor.authorBadalyan, S. M.eng
dc.contributor.authorVignale, Giovanni, 1957-eng
dc.date.issued2011eng
dc.descriptionhttp://arxiv.org/PS_cache/arxiv/pdf/1102/1102.1415v1.pdfeng
dc.description.abstractElectrons in double-layer semiconductor heterostructures experience two types of spin- orbit interaction: one arises within each layer from the lack of bulk inversion symmetry and/or externally applied electric fields; the other arises from the electric field created by electron density fluctuations in the other layer. We show how these two interactions, acting in a concerted manner, produce spin accumulation in one layer when a current is driven in the other. This accumulation has the same temperature dependence (~T^2) as the recently described spin Hall drag accumulation, but it is parametrically stronger in the clean limit.eng
dc.description.sponsorshipM.M.G. and M.A.S. are grateful to RFBR and \Dynasty" Foundation|ICFPM for nancial support. S.M.B. acknowledges support from EU Grant PIIF-GA-2009-235394, the DFG SFB 689, and the Belgium Science Policy (IAP). G.V. acknowledges support from NSF Grant No. DMR-0705460.eng
dc.identifier.citationarXiv:1102.1415v1eng
dc.identifier.urihttp://hdl.handle.net/10355/10017eng
dc.languageEnglisheng
dc.publisherarXiveng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subject.lcshNanoscienceeng
dc.subject.lcshMaterials scienceeng
dc.subject.lcshCondensed mattereng
dc.titleSpin accumulation from interlayer scattering in semiconductor bilayerseng
dc.typeArticleeng


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