dc.contributor.author | Glazov, M. M. | eng |
dc.contributor.author | Semina, M. A. | eng |
dc.contributor.author | Badalyan, S. M. | eng |
dc.contributor.author | Vignale, Giovanni, 1957- | eng |
dc.date.issued | 2011 | eng |
dc.description | http://arxiv.org/PS_cache/arxiv/pdf/1102/1102.1415v1.pdf | eng |
dc.description.abstract | Electrons in double-layer semiconductor heterostructures experience two types of spin- orbit interaction: one arises within each layer from the lack of bulk inversion symmetry and/or externally applied electric fields; the other arises from the electric field created by electron density fluctuations in the other layer. We show how these two interactions, acting in a concerted manner, produce spin accumulation in one layer when a current is driven in the other. This accumulation has the same temperature dependence (~T^2) as the recently described spin Hall drag accumulation, but it is parametrically stronger in the clean limit. | eng |
dc.description.sponsorship | M.M.G. and M.A.S. are grateful to RFBR and \Dynasty" Foundation|ICFPM for nancial support. S.M.B. acknowledges support from EU Grant PIIF-GA-2009-235394, the DFG SFB 689, and the Belgium Science Policy (IAP). G.V. acknowledges support from NSF Grant No. DMR-0705460. | eng |
dc.identifier.citation | arXiv:1102.1415v1 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/10017 | eng |
dc.language | English | eng |
dc.publisher | arXiv | eng |
dc.relation.ispartofcollection | University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications | eng |
dc.subject.lcsh | Nanoscience | eng |
dc.subject.lcsh | Materials science | eng |
dc.subject.lcsh | Condensed matter | eng |
dc.title | Spin accumulation from interlayer scattering in semiconductor bilayers | eng |
dc.type | Article | eng |