Hefner model parameters for power IGBTS under pulsed power conditions

Abstract

While the power insulated gate bipolar transistor (IGBT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the IGBT difficult to model for solid state pulsed power applications. The Oziemkiewicz implementation of the Hefner model is utilized to simulate IGBTs in some circuit simulation software packages. However, the seventeen parameters necessary for the Oziemkiewicz implementation must be known for the conditions under which the device will be operating. Using both experimental and simulated data with a least squares curve fitting technique, the parameters necessary to model a given IGBT can be determined. This thesis presents two sets of these seventeen parameters that correspond to two different models of power IGBTs. Specifically, these parameters correspond to voltages up to 3.5 kV, currents up to 750 A, and pulse widths of 10 [mu]s. Additionally, comparisons of the experimental and simulated data, as well as analysis for individual modeling parameters are presented.