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dc.contributor.authorKim, B. J.eng
dc.contributor.authorRyu, Yung-ryel, 1964-eng
dc.contributor.authorLee, T. S.eng
dc.contributor.authorWhite, H. W.eng
dc.contributor.corporatenameUniversity of Missouri (System)eng
dc.contributor.meetingnameMissouri Energy Summit (2009 : University of Missouri--Columbia)eng
dc.date.issued2009eng
dc.descriptionOnly abstract of poster available.eng
dc.descriptionTrack III: Energy Infrastructureeng
dc.description.abstractThe efficiency for LED lamps designed for replacement of incandescent bulbs for use in general home and commercial illumination has been steadily increasing, with an accompanying decrease cost in $/lumen. These LED lamps are based on GaN-based devices. We report a new structural design for these devices that increases the efficiency by an added 20 - 40%. The design incorporates a p-type ZnO layer sandwiched into the GaN-based device during growth. The reported efficiency jump is due to an increased number of hole-type carriers that reduce the so-called “efficiency droop” that occurs at high drive current operation. This increase in efficiency is in addition to other efficiency improvements reported. This result is useful for development of highly-efficient GaN LEDs operating at high current densities that will play a critical role in replacement of incandescent lamps by high efficiency solid-state light bulbs.eng
dc.identifier.urihttp://hdl.handle.net/10355/1117eng
dc.languageEnglisheng
dc.relation.ispartofPosters (Missouri Energy Summit 2009)eng
dc.relation.ispartofcommunityUniversity of Missouri System. Missouri Summits. Missouri Energy Summit 2009eng
dc.subjectEnergy Infrastructureeng
dc.subjectLED lampseng
dc.subjectefficiency droopeng
dc.subjectefficiency improvementseng
dc.subject.lcshLight emitting diodes -- Technological innovationseng
dc.subject.lcshGallium nitride -- Industrial applicationseng
dc.titleOutput Power Enhancement of GaN Light Emitting Diodes with p-type ZnO Hole Injection Layer [abstract]eng
dc.typeAbstracteng


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