Shared more. Cited more. Safe forever.
    • advanced search
    • submit works
    • about
    • help
    • contact us
    • login
    View Item 
    •   MOspace Home
    • University of Missouri-Columbia
    • Office of Undergraduate Research (MU)
    • Undergraduate Research and Creative Achievements Forum (MU)
    • 2007 Summer Undergraduate Research and Creative Achievements Forum (MU)
    • View Item
    •   MOspace Home
    • University of Missouri-Columbia
    • Office of Undergraduate Research (MU)
    • Undergraduate Research and Creative Achievements Forum (MU)
    • 2007 Summer Undergraduate Research and Creative Achievements Forum (MU)
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.
    advanced searchsubmit worksabouthelpcontact us

    Browse

    All of MOspaceCommunities & CollectionsDate IssuedAuthor/ContributorTitleIdentifierThesis DepartmentThesis AdvisorThesis SemesterThis CollectionDate IssuedAuthor/ContributorTitleIdentifierThesis DepartmentThesis AdvisorThesis Semester

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular AuthorsStatistics by Referrer

    Effect of Aluminum (Al) in crystallization of a-SiC for betavoltaic fabrication [abstract]

    Rodriguez-Rivera, Jose
    Sanchez, Jose Roberto
    Hossain, Maruf
    View/Open
    [PDF] Effect of Aluminum in crystallization.pdf (17.21Kb)
    Date
    2007
    Contributor
    University of Missouri-Columbia. Office of Undergraduate Research
    Format
    Presentation
    Metadata
    [+] Show full item record
    Abstract
    Metal-Induced Crystallization (MIC) technique was used to crystallize hydrogenated amorphous silicon carbide (a-SiC:H) films with different Aluminum (Al) thicknesses. Amorphous silicon carbide (a-SiC:H) was deposited on quartz, and silicon (Si) n-type substrates at a deposition temperature of 400°C by plasma enhanced chemical vapor deposition (PECVD). To optimize the crystallization process, Aluminum thin films of different thicknesses (200 nm, 100 nm, 50nm and 25nm of sputtered Al) were deposited on a-SiC:H films which were then annealed at 600°C in N2 environment for one hour. UV-visible spectrophotometer, current-voltage (I-V) characteristic curve, and Hall measurement system were used to characterize the films. The betevoltaic device utilizes radioactive material to produce electric power. Preliminary results show that our prepared crystalline SiC layer is a good candidate for fabricating betavoltaic devices with out degradation.
    URI
    http://hdl.handle.net/10355/1248
    Collections
    • 2007 Summer Undergraduate Research and Creative Achievements Forum (MU)

    Send Feedback
    hosted by University of Missouri Library Systems
     

     


    Send Feedback
    hosted by University of Missouri Library Systems