Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS
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[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] A novel sensor comprised of a metallized wide band-gap semiconductor substrate and a software-based Charge-Deep Level Transient Spectroscopy (Q-DLTS) system is being developed, called the Quantum Fingerprint™. Q-DLTS was used as the method to obtain and analyze the signal from the sensor surface while exposed to ambient gas species that altered the electronic structure of the semiconductor surface material. Aluminum Nitride (AlN) was investigated for use as a Quantum Fingerprint™ sensor. AlN sensor fabrication methods were developed and sensors were terminated, enhancing detection capabilities by creating new traps. AlN sensors were tested for their response to wide range of gas and vapor mixtures. A test chamber capable of generating highly accurate, low concentration gas and vapor mixtures was constructed for the purposes of sensor testing. A Residual Gas Analyzer (RGA) was used for comparison with the Quantum Fingerprint™ sensor and calibration method for quantitative measurements using the RGA was developed.
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