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dc.contributor.advisorGhosh, Tushar K., Dr.eng
dc.contributor.advisorTompson, R. V. (Robert Vaughn), 1958-eng
dc.contributor.advisorPrelas, Mark Antonio, 1953-eng
dc.contributor.authorRothenberger, Jasoneng
dc.date.issued2011eng
dc.date.submitted2011 Summereng
dc.descriptionTitle from PDF of title page (University of Missouri--Columbia, viewed on May 21, 2012).eng
dc.descriptionThe entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file.eng
dc.descriptionDissertation advisors: Dr. Tushar K. Ghosh, Dr. Robert V. Tompson, Dr. Mark A. Prelaseng
dc.descriptionVita.eng
dc.descriptionIncludes bibliographical references.eng
dc.description"July 2011"eng
dc.description.abstract[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT REQUEST OF AUTHOR.] A novel sensor comprised of a metallized wide band-gap semiconductor substrate and a software-based Charge-Deep Level Transient Spectroscopy (Q-DLTS) system is being developed, called the Quantum Fingerprint[trademark]. Q-DLTS was used as the method to obtain and analyze the signal from the sensor surface while exposed to ambient gas species that altered the electronic structure of the semiconductor surface material. Aluminum Nitride (AlN) was investigated for use as a Quantum Fingerprint[trademark] sensor. AlN sensor fabrication methods were developed and sensors were terminated, enhancing detection capabilities by creating new traps. AlN sensors were tested for their response to wide range of gas and vapor mixtures. A test chamber capable of generating highly accurate, low concentration gas and vapor mixtures was constructed for the purposes of sensor testing. A Residual Gas Analyzer (RGA) was used for comparison with the Quantum Fingerprint[trademark] sensor and calibration method for quantitative measurements using the RGA was developed.eng
dc.format.extentxi, 191 pageseng
dc.identifier.oclc872562102eng
dc.identifier.urihttps://hdl.handle.net/10355/14281
dc.identifier.urihttps://doi.org/10.32469/10355/14281eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsAccess is limited to the campus of the University of Missouri--Columbia.eng
dc.subjectchemical sensorseng
dc.subjectsemiconductorseng
dc.subjectaluminum nitrideeng
dc.titleConstruction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTSeng
dc.typeThesiseng
thesis.degree.disciplineNuclear engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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