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dc.contributor.authorParsons, Mattheweng
dc.contributor.corporatenameUniversity of Missouri-Columbia. Office of Undergraduate Researcheng
dc.contributor.meetingnameUndergraduate Research and Creative Achievements Forum (2006 : University of Missouri--Columbia)eng
dc.date2006eng
dc.date.issued2006eng
dc.descriptionAbstract only availableeng
dc.description.abstractA silicon crystal was irradiated with an ultrafast laser with different peak fluences. The damage caused by the laser is being characterized by x-ray topography measurement made with synchrotron radiation and a digital area detector. This project examines various means of characterizing the damage produced, in order to help understand the interactions between an ultrafast laser and a semiconductor.eng
dc.description.sponsorshipCollege of Engineering Honors Undergraduate Research Optioneng
dc.identifier.urihttp://hdl.handle.net/10355/1492eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri - Columbia Office of Undergraduate Researcheng
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. Office of Undergraduate Research. Undergraduate Research and Creative Achievements Forumeng
dc.source.urihttp://undergradresearch.missouri.edu/forums-conferences/abstracts/abstract-detail.php?abstractid=eng
dc.subjectsynchrotron radiationeng
dc.subjectdigital area detectoreng
dc.subjectultrafast lasereng
dc.titleAnalysis of laser-irradiated silicon crystal using x-ray topography [abstract]eng
dc.typePresentationeng


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