• Shallow trench isolation process in microfabrication for flash (NAND) memory 

    Garud, Niharika (University of Missouri--Columbia, 2008)
    Technology is steadily advancing where semiconductors and microelectronics have become such a huge source of revenue and area of technological interest, resulting in reduced device geometries and more complicated microelectronic ...
  • Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory 

    Yun, Minseong, 1978-; Mueller, David W.; Hossain, Maruf; Misra, Veena; Gangopadhyay, Shubhra (Institute of Electrical and Electronics Engineers, 2009-12)
    The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al2O3 tunneling and capping oxide layers were studied. Significantly different ...