• Crystallization of amorphous silicon by self-propagation of nanoengineered thermites 

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu, 1974-; Gao, Yuanfang; Apperson, Steven J., 1982-; Shende, Rajesh; Guha, Suchi; Arif, Mohammad, 1974-; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra (American Institute of Physics, 2007-03)
    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma ...
  • Deposition and characterization of high permittivity thin-film dielectrics 

    Ravindran, Ramasamy (University of Missouri--Columbia, 2006)
    As integrated circuit (IC) devices scale to ever smaller nodes, replacing the front end dielectric has become a primary challenge. To enable greater device densities, control power consumption, and enhance performance, a ...
  • Effect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFET 

    Waseem, Akbar (University of Missouri--Columbia, 2006)
    A 3-D silicon nanowire wrap around gate (WAG) MOSFET was designed and it was shown that the properties of the cylindrical channel silicon nanowire device were inline with those of a conventional MOSFET. The concept of ...