• Crystallization of amorphous silicon by self-propagation of nanoengineered thermites 

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu, 1974-; Gao, Yuanfang; Apperson, Steven J., 1982-; Shende, Rajesh; Guha, Suchi; Arif, Mohammad, 1974-; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra (American Institute of Physics, 2007-03)
    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma ...
  • Deposition and characterization of high permittivity thin-film dielectrics 

    Ravindran, Ramasamy (University of Missouri--Columbia, 2006)
    As integrated circuit (IC) devices scale to ever smaller nodes, replacing the front end dielectric has become a primary challenge. To enable greater device densities, control power consumption, and enhance performance, a ...
  • Electric field and temperature-induced removal of moisture in nanoporous organosilicate films 

    Biswas, N.; Lubguban, J. A.; Gangopadhyay, Shubhra (American Institute of Physics, 2004-05)
    The effects of bias-temperature-stress (BTS) or simply temperature-stress (TS) on nanoporous low-k methylsilsesquioxane films are studied. Initially, the as-given and O2 ashed/etched films exhibit physical adsorption of ...
  • Initial growth of interfacial oxide during deposition of HfO2 on silicon 

    Choi, K.; Temkin, H.; Harris, H.; Gangopadhyay, Shubhra; Xie, L.; White, Marvin (American Institute of Physics, 2004-05)
    Interfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried ...
  • Supercritical CO2 extraction of porogen phase: An alternative route to nanoporous dielectrics 

    Lubguban, J. A.; Gangopadhyay, Shubhra (Materials Research Society, 2004-11)
    We present a supercritical CO2 (SCCO2) process for the preparation of nanoporous organosilicate thin films for ultralow dielectric constant materials. The porous structure was generated by SCCO2 extraction of a sacrificial ...