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dc.contributor.advisorGuha, Suchieng
dc.contributor.authorUkah, Ndubuisi Benjamineng
dc.date.issued2012eng
dc.date.submitted2012 Falleng
dc.descriptionTitle from PDF of title page (University of Missouri--Columbia, viewed on March 5, 2013).eng
dc.descriptionThe entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file.eng
dc.descriptionDissertation advisor: Dr. Suchi Guhaeng
dc.descriptionIncludes bibliographical references.eng
dc.descriptionVita.eng
dc.descriptionPh. D. University of Missouri--Columbia 2012.eng
dc.description"December 2012"eng
dc.description.abstractThis thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method - matrix assisted pulsed laser evaporation (MAPLE) - of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltages (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Low-voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in PC, is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.eng
dc.description.bibrefIncludes bibliographical references.eng
dc.format.extentxi, 115 pageseng
dc.identifier.oclc872569236eng
dc.identifier.urihttps://doi.org/10.32469/10355/33112eng
dc.identifier.urihttps://hdl.handle.net/10355/33112
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
dc.subjectorganic field-effect transistoreng
dc.subjectpolymer dissolutioneng
dc.subjectsolvent-selectivity problemeng
dc.subjecthigh operational stabilityeng
dc.titleLow dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitorseng
dc.typeThesiseng
thesis.degree.disciplinePhysics and astronomy (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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