PIN photodiode controlled class E microwave power amplifier
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[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] This project is to design, build and test a switched-mode class E amplifier operating at 1GHz, using a PIN photodiode as switch. In order to explore the optically controlled class E amplifier configuration, I have done some research on characteristics of PN junction photodiode, PIN photodiode and avalanche photodiode, and understand the reason I chose PIN photodiode in my design. The size of the board was 2.5 in×3 in and was designed at the frequency of 1GHz. It was manufactured in Sunstone Circuit Corporation, soldered and tested in the lab. The DC power is 0.5V and output is 0.4V (peak to peak sinusoidal waveform) at optimum performance in the lab. The optimum efficiency is 32% after calculation.
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