Browsing Theses and Dissertations (MU) by Identifier "http://hdl.handle.net/10355/10539"
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Hefner model parameters for power IGBTS under pulsed power conditions
(University of Missouri--Columbia, 2010)While the power insulated gate bipolar transistor (IGBT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the IGBT difficult to model for solid state pulsed power ...