[-] Show simple item record

dc.contributor.advisorO'Connell, Robert M.eng
dc.contributor.authorScheetz, Chriseng
dc.date.issued2015eng
dc.date.submitted2015 Springeng
dc.description.abstract[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT REQUEST OF AUTHOR.] A gallium arsenide-based photoconductive switch is a simple, fast alternative to many photodetectors available today. Using such as switch within a Class E power amplifier, however, highlights some drawbacks of a single switch, such as operating voltage. A novel approach was taken to add additional photoconductive switches to a single device by adding heavily doped N-type layers between intrinsic layers. A fabrication process for this device was also developed and improved over the course of the project. However, the built-in voltage of a single device was greatly reduced in this structure, and the assumed cause of it is from punchthrough breakdown. The rectifying contacts may also have been affected by gold diffusing into gallium arsenide by contact annealing. In the future, the fabrication process could be used to develop possible heterostructure photoconductive devices or other types of photodetectors.eng
dc.identifier.urihttps://hdl.handle.net/10355/47191
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsAccess is limited to the campuses of the University of Missouri.eng
dc.titleFabrication of a photoconductive switch for a slass E amplifiereng
dc.typeThesiseng
thesis.degree.disciplineElectrical engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelMasterseng
thesis.degree.nameM.S.eng


Files in this item

[PDF]
[PDF]
[PDF]

This item appears in the following Collection(s)

[-] Show simple item record