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dc.contributor.advisorUllrich, Carsten A.eng
dc.contributor.authorWijewardane, Harshani Ovamini, 1971-eng
dc.date.issued2007eng
dc.date.submitted2007 Summereng
dc.descriptionThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file.eng
dc.descriptionTitle from title screen of research.pdf file (viewed on December 17, 2007)eng
dc.descriptionVita.eng
dc.descriptionIncludes bibliographical references.eng
dc.descriptionThesis (Ph. D.) University of Missouri-Columbia 2007.eng
dc.descriptionDissertations, Academic -- University of Missouri--Columbia -- Physics.eng
dc.description.abstractThe intersubband (ISB) dynamics of conduction electrons in semiconductor quantum wells exhibits a variety of interesting and potentially useful nonlinear phenomena. In this work we present three different formalisms which we use to describe ISB effects in the nonlinear regime. We first develop a density-matrix approach based on time-dependent density functional theory (TDDFT) to describe nonlinear ISB conduction electron dynamics in the time domain. We apply this formalism to study coherent control of optical bistability. We then focus on the fact that the exact time-dependent exchange-correlation (xc) potential contains information about the previous history of the system, including its initial state. We describe two different formalisms which go beyond the adiabatic approximation and apply them to collective charge-density oscillations in quantum wells. First, we develop a viscosity-based TDDFT in the time domain and show how the memory and velocity dependence of the viscosity-based xc potential introduces retardation, which in turn leads to decoherence and energy relaxation. The other formalism is the time-dependent optimized effective potential method (TDOEP). We solve the full TDOEP integral equation with exact exchange and show how the memory arises from the exact exchange and results in retardation effects in the electron dynamics.eng
dc.identifier.merlinb61528031eng
dc.identifier.oclc184737533eng
dc.identifier.urihttps://hdl.handle.net/10355/4744
dc.identifier.urihttps://doi.org/10.32469/10355/4744eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.subject.lcshSemiconductorseng
dc.subject.lcshNanostructureseng
dc.subject.lcshConduction electronseng
dc.subject.lcshDensity functionalseng
dc.titleNonlinear intersubband dynamics in semiconductor nanostructureseng
dc.typeThesiseng
thesis.degree.disciplinePhysics (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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