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dc.contributor.advisorGopalakrishna, Srinatheng
dc.contributor.authorOthman, Maslin, 1977-eng
dc.date.issued2007eng
dc.date.submitted2007 Springeng
dc.descriptionThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file.eng
dc.descriptionTitle from title screen of research.pdf file (viewed on March 24, 2009)eng
dc.descriptionVita.eng
dc.descriptionThesis (Ph.D.) University of Missouri-Columbia 2007.eng
dc.description.abstractMy research will address issues at the back-end-of-line in microelectronics fabrication, specifically the need for Low-k extendibility. The International Roadmap for Semiconductors (2005) suggested that interconnect insulation must be replaced with a material having an ultra-low dielectric constant (k) of [less than] 2.0 and can withstand rigorous current process integration for the 65 nm technology. Creating porosity in the films produces k-values as low (1.0) air. In this research, supercritical CO[subscript 2] (SCCO[subscript 2]) process is utilized to create pores, remove water, repair plasma-damaged sample and seal pores. These multi-step processing does not only produce low-k film but also create device reliability. S 2 2 pectroscopy ellipsometric (SE) analysis is used to evaluate the performance of each process on porous film. In SE analysis, Cauchy, Bruggeman Effective Medium Approximation and graded models are used to model the processed samples. The depth profile SE analysis demonstrates the individual process performance based on its changes of refractive index (n) throughout the film thickness. SE also provide important film properties like thickness, porosity etc. In addition to SE, Fourier Transform Infra-red (FT-IR), Scanning Electron Microscopy (SEM) and electrical characterizations are used. Results show that SCCO[subscript 2]/co-solvents can extract porogens and remove water effectively at a significantly shorter time ([less than or equal to] 1 hr) and at a low temperature ( [less than or equal to] 160[degrees]C) without thickness shrinkage in contrast with thermal annealing which uses 450[degrees]C and 5 hours without significantly shrinkage. SCCO[subscript 2]/TMCS removes water and terminates silanol group with methyl group, and hence preventing water re-adsorption which increases k. The dense layer on the sample surface that formed through the vapor treatment/HMDS helps to seal pores and prevent metal diffusion. This research also shows that patterning samples prior to porogen/water removal can minimize plasma damages on porous sample.eng
dc.description.bibrefIncludes bibliographical referenceseng
dc.identifier.merlinb66670408eng
dc.identifier.oclc316855895eng
dc.identifier.urihttps://doi.org/10.32469/10355/4879eng
dc.identifier.urihttps://hdl.handle.net/10355/4879
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
dc.subject.lcshEllipsometryeng
dc.subject.lcshSemiconductorseng
dc.subject.lcshSpectrum analysiseng
dc.subject.lcshDielectricseng
dc.subject.lcshMicroelectronicseng
dc.titleSpectroscopic ellipsometry analysis of nanoporous low dielectric constant films processed via supercritical carbon dioxide for next-generation microelectronic deviceseng
dc.typeThesiseng
thesis.degree.disciplineElectrical engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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