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dc.contributor.advisorNunnally, W. C. (William Charles)eng
dc.contributor.authorFessler, Christopher Michaeleng
dc.date.issued2007eng
dc.date.submitted2007 Falleng
dc.descriptionThe entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file.eng
dc.descriptionTitle from PDF of title page (University of Missouri--Columbia, viewed September 10, 2009).eng
dc.descriptionThesis advisor: William Nunnally.eng
dc.descriptionIncludes bibliographical references.eng
dc.descriptionM.S. University of Missouri--Columbia 2007.eng
dc.descriptionDissertations, Academic -- University of Missouri--Columbia -- Electrical engineering.eng
dc.description.abstractSilicon Carbide (SiC) has a bulk dielectric strength of 3000 kV/cm, thermal conductivity of 4.9 W/(cm-K), and high tensile strength. It is considered the most promising photo-switching material that can enable the fielding of the most compact pulse power systems. The SiC photoswitch as an advantage over other high power switches when it is operated at a high blocking electric field. Presently, the field blocking performance of the SiC photo-switch has fallen short of the theoretical expectations. Breakdown occurs prematurely at an applied electric field of ̃300 kV/cm not at the expected 3000 kV/cm. Breakdown is not due to the SiC bulk material but to electric field enhancement caused by the switch packaging. No packaging method exists to effectively address electric field crowding at the point where the electrode leaves the SiC bulk. At this triple point junction, the induced electric field exceeds the bulk dielectric strength of the SiC. Without an improved package, the potential of the SiC photo-switch may not be realized. Reported in this paper is a novel concept of inserting contoured electrodes into the SiC bulk to minimize field crowding in order to improve the breakdown characteristics. The concept is simulated, a fabrication process is designed, and the first steps to the fabrication process are tested.eng
dc.identifier.merlinb70796336eng
dc.identifier.oclc436765288eng
dc.identifier.urihttps://hdl.handle.net/10355/5080
dc.identifier.urihttps://doi.org/10.32469/10355/5080eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. Graduate School. Theses and Dissertations. Theses. 2007 Theseseng
dc.subject.lcshPhotoconductivityeng
dc.subject.lcshElectric switchgeareng
dc.subject.lcshSilicon carbide -- Electric propertieseng
dc.titleImproved contact design for the SiC photo-switch used in high power applicationseng
dc.typeThesiseng
thesis.degree.disciplineElectrical engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelMasterseng
thesis.degree.nameM.S.eng


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