• Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer) 

    Thomas, Robert J. (Robert James), 1967-; Rockwell, Benjamin A.; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Ramdas, A. K.; Kobayashi, M.; Gunshor, R. L. (American Institute of Physics, 1995)
    A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via ...