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    • University of Missouri-Columbia
    • Graduate School - MU Theses and Dissertations (MU)
    • Theses and Dissertations (MU)
    • Theses (MU)
    • 2008 Theses (MU)
    • 2008 MU theses - Freely available online
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    Shallow trench isolation process in microfabrication for flash (NAND) memory

    Garud, Niharika
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    [PDF] short.pdf (17.04Kb)
    [PDF] research.pdf (5.544Mb)
    Date
    2008
    Format
    Thesis
    Metadata
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    Abstract
    Technology is steadily advancing where semiconductors and microelectronics have become such a huge source of revenue and area of technological interest, resulting in reduced device geometries and more complicated microelectronic fabrication methods. In this thesis, high density plasma oxide process has been discussed, which is widely used especially for shallow trench isolations on micro and nano-sized devices. The problem discussed here relates to the process and how it can be easily imbalanced due to inaccurate assumptions and process parameters. Etch-outs, as presented in this thesis, are the root cause of the problem and a model demonstrating various correlations with some noteworthy results has been developed.
    URI
    https://doi.org/10.32469/10355/5622
    https://hdl.handle.net/10355/5622
    Degree
    M.S.
    Thesis Department
    Electrical and computer engineering (MU)
    Rights
    OpenAccess.
    This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
    Collections
    • Electrical Engineering and Computer Science electronic theses and dissertations (MU)
    • 2008 MU theses - Freely available online

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