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dc.contributor.advisorAlmasri, Mahmoudeng
dc.contributor.authorHai, Muhammad Lutfuleng
dc.date.issued2015eng
dc.date.submitted2015 Falleng
dc.description.abstract[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT REQUEST OF AUTHOR.] This dissertation presents a detailed characterization of amorphous Silicon Germanium Oxide (Si-Ge-O) thin films for uncooled infrared (IR) microbolometers. Every object, whose temperature is more than absolute zero, radiates IR radiation. Uncooled infrared microbolometer can detect that IR radiation and can be used for thermal imaging. Such IR imaging cameras detect variations in heat and create an electronic image of everything in view. These cameras have many important applications in both the commercial and defense sectors including automotive and truck safety, medical diagnostics, surgical interventions, surveillance, law enforcement, security, etc. Unlike many other infrared imaging products, microbolometers can operate at room temperature, resulting a significant cost reduction.eng
dc.identifier.urihttps://hdl.handle.net/10355/57739
dc.identifier.urihttps://doi.org/10.32469/10355/57739eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsAccess is limited to the campuses of the University of Missouri.eng
dc.titleAmorphous silicon germanium oxide (Si[sub]xGe[sub]yO[sub]1-x-y) thin films for uncooled infrared microbolometereng
dc.typeThesiseng
thesis.degree.disciplineElectrical and computer engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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