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dc.contributor.advisorIslam, Naz E.eng
dc.contributor.authorWaseem, Akbareng
dc.date.issued2006eng
dc.date.submitted2006 Summereng
dc.descriptionThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file.eng
dc.descriptionTitle from title screen of research.pdf file (viewed on September 14, 2007)eng
dc.descriptionVita.eng
dc.descriptionIncludes bibliographical references.eng
dc.descriptionThesis (M.S.) University of Missouri-Columbia 2006.eng
dc.descriptionDissertations, Academic -- University of Missouri--Columbia -- Electrical engineering.eng
dc.description.abstract[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] A 3-D silicon nanowire wrap around gate (WAG) MOSFET was designed and it was shown that the properties of the cylindrical channel silicon nanowire device were inline with those of a conventional MOSFET. The concept of interferometric lithography was introduced for the fabrication of nanowire. The current conduction process through the nanowire device has been investigated. A number of parameters such as carrier confinement, effects of parallel and transverse field-dependent mobilities, and carrier scattering due to Coulomb effects, acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The subthreshold slope characteristics were calculated for the nanowire device. Improvements in the nanowire WAG MOSFET has been investigated by changing nanowire device dimensions. The positive impact of reducing gate length on current along the channel of a silicon nanowire wrap-around-gate MOSFET has also been demonstrated. It has been shown analytically that in a WAG MOSFET with shorter gate length, transverse electric field in the channel is suppressed considerably which result in improved carrier mobility and drift velocity along the channel as compared to a WAG MOSFET with a longer gate length. Simulated I-V characteristics of short and long gate nanowire WAG MOSFETs have been presented and it has been found that for 50 nm channel diameter, the current in a short gate device is almost four times higher than that in a long gate device.eng
dc.identifier.merlinb59489480eng
dc.identifier.oclc171291057eng
dc.identifier.urihttps://hdl.handle.net/10355/5878
dc.identifier.urihttps://doi.org/10.32469/10355/5878eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsAccess is limited to the campus of the University of Missouri--Columbia.eng
dc.subject.lcshMetal oxide semiconductor field-effect transistorseng
dc.subject.lcshNanowireseng
dc.subject.lcshSiliconeng
dc.titleEffect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFETeng
dc.typeThesiseng
thesis.degree.disciplineElectrical engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelMasterseng
thesis.degree.nameM.S.eng


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