dc.contributor.advisor | Chowdhury, Masud H. | |
dc.contributor.author | Shishupal, Hemanshu | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017 Fall | |
dc.description | Title from PDF of title page viewed January 11, 2019 | |
dc.description | Thesis advisor: Masud H. Chowdhury | |
dc.description | Vita | |
dc.description | Includes bibliographical references (pages 37-39) | |
dc.description | Thesis (M.S.)--School of Computing and Engineering. University of Missouri--Kansas City, 2017 | |
dc.description.abstract | This thesis presents a model that provides the output characteristics of next-generation
flash memories using two-dimensional materials. Multi-Layer Graphene Nanoribbon (MLGNR)
and Graphene are used as the channel and floating gate of the device proposed. The current in
the channel is calculated using the Poisson-Schrodinger equation; the numerical algorithm is
based on the Newton-Raphson (NR) method. A comparative study is done on two different
Floating Gate Transistor (FGT) based on the proposed model. Silicon dioxide (SiO₂) and Hafnium
dioxide (HfO₂) are the two oxides explored as the top control oxide of the device. | eng |
dc.description.tableofcontents | Introduction -- Graphene and multi-layer graphene nanoribbon -- Device specifications -- Flowchart and module -- Results -- Conclusion and future work | |
dc.format.extent | xi, 41 pages | |
dc.identifier.uri | https://hdl.handle.net/10355/66914 | |
dc.publisher | University of Missouri -- Kansas City | eng |
dc.subject.lcsh | Flash memories (Computers) | |
dc.subject.lcsh | Graphene | |
dc.subject.other | Thesis -- University of Missouri--Kansas City -- Engineering | |
dc.title | Next-Generation Flash Memories Using Two-Dimensional Materials | eng |
dc.type | Thesis | eng |
thesis.degree.discipline | Electrical Engineering (UMKC) | |
thesis.degree.grantor | University of Missouri--Kansas City | |
thesis.degree.level | Masters | |
thesis.degree.name | M.S. | |