Next-Generation Flash Memories Using Two-Dimensional Materials

Abstract

This thesis presents a model that provides the output characteristics of next-generation flash memories using two-dimensional materials. Multi-Layer Graphene Nanoribbon (MLGNR) and Graphene are used as the channel and floating gate of the device proposed. The current in the channel is calculated using the Poisson-Schrodinger equation; the numerical algorithm is based on the Newton-Raphson (NR) method. A comparative study is done on two different Floating Gate Transistor (FGT) based on the proposed model. Silicon dioxide (SiO₂) and Hafnium dioxide (HfO₂) are the two oxides explored as the top control oxide of the device.