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dc.contributor.advisorGupta, Sanjueng
dc.contributor.authorMulakaluri, Murali Kiraneng
dc.date.issued2009eng
dc.date.submitted2009 Springeng
dc.descriptionThe entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file.eng
dc.descriptionTitle from PDF of title page (University of Missouri--Columbia, viewed on March 23, 2010).eng
dc.descriptionThesis advisor: Dr. Sanju Gupta.eng
dc.descriptionM.S. University of Missouri-Columbia 2009.eng
dc.description.abstract[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT REQUEST OF AUTHOR.] Carbon based materials such as graphite, fullerene, amorphous carbon and diamond in all forms and specifically doped diamond is of great interest owing to their several unsurpassable physical (mechanical, thermal, electrical, chemical, and biological) properties for multiple technological applications. In addition, diamond is reputed as radiation hard semi conducting material, thus predestined its usage for space/ extreme environment in contrast to existing Si, GaAs and GaN semiconductors. Boron-doped diamond films were synthesized using an ASTeX 5kW microwave plasma-assisted chemical vapor deposition (MWCVD) reactor with varying boron concentrations ranging from 100 to 4000 ppm in the gas phase. These samples were subjected to gamma radiation doses of 5, 10 and 100 Mrads. They were analyzed prior to and post-irradiation in terms of morphology, microscopic structure and physical property using various complementary analytical tools including scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy (RS), X-ray diffraction (XRD) and electrical (I-V) to establish the property-structure-processing relationship. The influence of both boron and gamma irradiation on structural and physical properties are presented. For instance the XRD measurements exhibited the borocarbide phase formation, while micro-Raman scattering studies reveal electronic property modifications (quasi metallic to semi conducting). Possible explanations for these findings are discussed in terms of multiple roles of (B, H) in diamond (C).eng
dc.description.bibrefIncludes bibliographical referenceseng
dc.identifier.oclc567719319eng
dc.identifier.urihttps://doi.org/10.32469/10355/6713eng
dc.identifier.urihttps://hdl.handle.net/10355/6713
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. Graduate School. Theses and Dissertations. Theses. 2009 Theseseng
dc.rightsAccess is limited to the campuses of the University of Missouri.eng
dc.subject.lcshDiamond thin filmseng
dc.subject.lcshSemiconductor dopingeng
dc.subject.lcshChemical vapor depositioneng
dc.subject.lcshBoroneng
dc.titleInfluence of gamma irradiation on chemical vapor deposited boron-doped diamond filmseng
dc.typeThesiseng
thesis.degree.disciplineElectrical engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelMasterseng
thesis.degree.nameM.S.eng


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