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Photoinduced magnetism in the ferromagnetic semiconductors

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http://hdl.handle.net/10355/7213
dc.contributor.authorMishra, Subodha, 1965-eng
dc.contributor.authorSatpathy, Sashi Sekhar, 1956-eng
dc.date.issued2009eng
dc.description.abstractWe study the enhancement of the magnetic transition temperature $T_c$ due to incident light in ferromagnetic semiconductors such as EuS. The photoexcited carriers mediate an extra ferromagnetic interaction due to the coupling with the localized magnetic moments. The Hamiltonian consists of a Heisenberg model for the localized moments and an interaction term between the photoexcited carriers and the localized moments. The model predicts a small enhancement of the transition temperature in semi-quantitative agreement with the experiments.eng
dc.description.sponsorshipThis work was supported by the U. S. Department of Energy through Grant No. DE-FG02-00ER45818.eng
dc.identifier.citationarXiv:0906.5514v1eng
dc.identifier.urihttp://hdl.handle.net/10355/7213eng
dc.languageEnglisheng
dc.publisherarXiveng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.source.urihttp://arxiv.org/PS_cache/arxiv/pdf/0906/0906.5514v1.pdfeng
dc.subjectmagnetic transition temperatureeng
dc.subjectferromagnetic semiconductorseng
dc.subjectmagnetic momentseng
dc.subject.lcshPhotomagnetic effecteng
dc.subject.lcshFerromagnetic materialseng
dc.subject.lcshMagnetic semiconductorseng
dc.titlePhotoinduced magnetism in the ferromagnetic semiconductorseng
dc.typeArticleeng


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