Bandgap prediction by deep learning in configurationally hybridized graphene and boron nitride
It is well-known that the atomic-scale and nano-scale configuration of dopants can play a crucial role in determining the electronic properties of materials. However, predicting such effects is challenging due to the large range of atomic configurations that are possible. Here, we present a case study of how deep learning algorithms can enable bandgap prediction in hybridized boron–nitrogen graphene with arbitrary supercell configurations. A material descriptor that enables correlation of structure and bandgap was developed for convolutional neural networks. Bandgaps calculated by ab initio calculations, and corresponding structures, were used as training datasets. The trained networks were then used to predict bandgaps of systems with various configurations. For 4 × 4 and 5 × 5 supercells they accurately predict bandgaps, with a R 2 of >90% and root-mean-square error of ~0.1 eV. The transfer learning was performed by leveraging data generated from small supercells to improve the prediction accuracy for 6 × 6 supercells. This work will pave a route to future investigation of configurationally hybridized graphene and other 2D materials. Moreover, given the ubiquitous existence of configurations in materials, this work may stimulate interest in applying deep learning algorithms for the configurational design of materials across different length scales.
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