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    Observation of the superconducting proximity effect in Nb/InAs and NbNx/InAs by Raman scattering

    Roshchin, I. V.
    Abeyta, A. C.
    Greene, L. H.
    Tanzer, T. A.
    Dorsten, J. F.
    Bohn, P. W.
    Han, Sang-Wook, 1964-
    Miceli, Paul F.
    Klem, J. F.
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    [PDF] ObservationSuperconductingProximityEffect.pdf (111.6Kb)
    Date
    2002
    Format
    Article
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    Abstract
    High-quality thin Nb and NbN films (60-100 Å) are grown on (100) n+-InAs (n=1019cm-3) substrates by dc-magnetron sputter deposition. Studies of the electronic properties of interfaces between the superconductor and the semiconductor are done by Raman scattering measurements. The superconducting proximity effect at superconductor-semiconductor interfaces is observed through its impact on inelastic light scattering intensities originating from the near-interface region of InAs. The InAs longitudinal optical phonon LO mode (237cm-1) and the plasmon-phonon coupled modes L- (221cm-1) and L+ (1100 to 1350cm-1), for n+=1×1019-2×1019cm-3 are measured. The intensity ratio of the LO mode (associated with the near-surface charge accumulation region, in InAs) to that of the L- mode (associated with bulk InAs), is observed to increase by up to 40% below the superconducting transition temperature. This temperature-dependent change in light scattering properties is only observed with high quality superconducting films and when the superconductor and the semiconductor are in good electrical contact. A few possible mechanisms of the observed effect are proposed.
    URI
    http://hdl.handle.net/10355/7461
    Citation
    Phys. Rev. B 66, 134530 (2002)
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    • Physics and Astronomy publications (MU)

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