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    Temperature dependence of surface roughening during homoepitaxial growth on Cu(001)

    Botez, Christian E. (Christian Emil) 1968-
    Miceli, Paul F.
    Stephens, P. W.
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    [PDF] TemperatureDependenceSurfaceRoughening.pdf (80.09Kb)
    Date
    2001
    Format
    Article
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    Abstract
    X-ray scattering has been used to study the roughening of the Cu(001) surface during homoepitaxial growth, as a function of temperature. Between 370 and 160 K, the mean-square roughness σ2, obtained from specular reflectivity data, was found to increase as a power law σ2=Θ2β for coverages Θ, ranging from 3 to 96 ML. The roughening exponent β was observed to depend on the temperature of the substrate: it monotonically increases with decreasing temperature from β≈1/3 at T=370K to β≈1/2, at T=200K. At 110 K a smoother growth re-enters in the presence of a large vacancy concentration in the deposited film.
    URI
    http://hdl.handle.net/10355/7470
    Citation
    Phys. Rev. B 64, 125427 (2001)
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    • Physics and Astronomy publications (MU)

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