• Novel Non Precharging Single Bitline 8T Static Random Access Memory 

    Mohammed, Mahmood Uddin (University of Missouri--Kansas City, 2016)
    Novel 8T SRAM design, employs individual bit-line (BL) and word-line (WL) for each operation. The read operation uses read word-line (RWL) and read bit-line (RBL) respectively. On other hand the write operation employs ...