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dc.contributor.authorMiceli, Paul F.eng
dc.contributor.authorPalmstrom, C. J.eng
dc.date.issued1995eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.51.5506 DOI:10.1103/PhysRevB.51.5506eng
dc.description.abstractMotivated by x-ray-scattering measurements performed on ErAs(001)/GaAs(001) and In0.7Ga0.3P(001)/GaAs(001), we present a model that explains the origin of a narrow peak and diffuse scattering, which are frequently observed at Bragg reflections in epitaxial systems. Central to the model is a correlation length for mosaiclike rotational disorder that arises in lattice-mismatched epitaxial films. The adhesive force between the film and the substrate is found to play a crucial role and leads to a striking anisotropy in the line shapes.eng
dc.identifier.citationPhys. Rev. B 51, 5506-5509 (1995)eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/7551eng
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectX-ray diffraction and scatteringeng
dc.subjectstructure and morphologyeng
dc.subjectcrystalline orientation and textureeng
dc.subject.lcshX-rays -- Diffractioneng
dc.subject.lcshX-rays -- Scatteringeng
dc.subject.lcshTexture (Crystallography)eng
dc.titleX-ray scattering from rotational disorder in epitaxial films: An unconventional mosaic crystaleng
dc.typeArticleeng


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