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dc.contributor.authorKyrychenko, F. V.eng
dc.contributor.authorUllrich, Carsten A.eng
dc.date.issued2009eng
dc.descriptiondoi: 10.1088/0953-8984/21/8/084202 http://iopscience.iop.org/0953-8984/21/8/084202/pdf/0953-8984_21_8_084202.pdfeng
dc.description.abstractA theory of transport in spin and charge disordered media is developed, with a particular emphasis on dilute magnetic semiconductors. The approach is based on the equation of motion for the current-current response function and considers both spin and charge disorder and electron-electron interaction on an equal footing. The formalism is applied to the specific case of Ga1−xMnxAs. Within the single parabolic band approximation it is shown that both spin (p-d exchange) and charge (Coulomb) scattering contributions to the resistivity are of the same order of magnitude and should be treated simultaneously. Positional correlations of charged impurities are shown to significantly increase the Coulomb scattering. In the magnetically ordered phase, the suppression of localized spin fluctuations leads to a sizable reduction of spin scattering, which may contribute to the experimentally observed drop in resistivity below the critical temperature. The developed model allows for a comprehensive treatment of electron-electron interaction, screening and correlation effects by means of time-dependent density-functional theory. It is shown that collective modes and a dynamical treatment of electron-electron interaction are essential for an accurate description of the infrared absorption spectrum.eng
dc.description.sponsorshipThis work was supported by DOE grant no. DE-FG02-05ER46213.eng
dc.identifier.citationJ. Phys.: Condens. Matter 21 (2009) 084202eng
dc.identifier.issn0953-8984eng
dc.identifier.urihttp://hdl.handle.net/10355/7576eng
dc.languageEnglisheng
dc.publisherInstitute of Physicseng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectIII-V and II-VI semiconductorseng
dc.subjectdynamic propertieseng
dc.subjectdensity functional theoryeng
dc.subjectmagnetic semiconductorseng
dc.subject.lcshDiluted magnetic semiconductorseng
dc.subject.lcshDensity functionalseng
dc.subject.lcshMagnetic semiconductorseng
dc.subject.lcshOptical constantseng
dc.subject.lcshGallium arsenide semiconductorseng
dc.titleTransport and optical conductivity in dilute magnetic semiconductorseng
dc.typeArticleeng


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