Spin Hall Drag in Electronic Bilayers

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Spin Hall Drag in Electronic Bilayers

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/7634

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Title: Spin Hall Drag in Electronic Bilayers
Author: Badalyan, S. M.; Vignale, Giovanni, 1957-
Keywords: theory of electronic transport
scattering mechanisms
conductivity phenomena in semiconductors and insulators
spin polarized transport
Date: 2009-11-02
Publisher: American Physical Society
Citation: Phys. Rev. Lett. 103, 196601 (2009)
Abstract: We predict a new effect in electronic bilayers: spin Hall drag. The effect consists of the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of spin-orbit and Coulomb interactions. Our theoretical analysis, based on the Boltzmann equation formalism, identifies two main contributions to the spin Hall drag resistivity: the side-jump contribution, which dominates at low temperature, going as T2, and the skew-scattering contribution, which is proportional to T3. The induced spin accumulation, while generally quite small, should be observable in optical rotation experiments.
URI: http://hdl.handle.net/10355/7634
ISSN: 0031-9007

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