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dc.contributor.authorHankiewicz, E. M.eng
dc.contributor.authorVignale, Giovanni, 1957-eng
dc.date.issued2009eng
dc.descriptiondoi: 10.1088/0953-8984/21/25/253202eng
dc.description.abstractIn this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.eng
dc.description.sponsorshipThis work was financially supported by NSF grant no. DMR-0705460 and DFG grant HA5893/1-1.eng
dc.identifier.citationE M Hankiewicz and G Vignale 2009 J. Phys.: Condens. Matter 21 253202eng
dc.identifier.issn0953-8984eng
dc.identifier.urihttp://hdl.handle.net/10355/7661eng
dc.languageEnglisheng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectspin hall effecteng
dc.subjectspin Coulomb drageng
dc.subject.lcshCondensed mattereng
dc.subject.lcshSemiconductorseng
dc.subject.lcshHall effecteng
dc.subject.lcshCoulomb functionseng
dc.titleSpin-Hall effect and spin-Coulomb drag in doped semiconductorseng
dc.typeArticleeng


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