Observing the spin Coulomb drag in spin-valve devices

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Observing the spin Coulomb drag in spin-valve devices

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/7765

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Title: Observing the spin Coulomb drag in spin-valve devices
Author: Vignale, Giovanni, 1957-
Keywords: scattering mechanisms
spin polarized transport in semiconductors
Date: 2005-02-04
Publisher: American Physical Society
Citation: Phys. Rev. B 71, 125103 (2005) [5 pages]
Abstract: The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spin-drag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.
URI: http://hdl.handle.net/10355/7765
ISSN: 1098-0121

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