[-] Show simple item record

dc.contributor.authorVignale, Giovanni, 1957-eng
dc.date.issued2005eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.71.125103 DOI:10.1103/PhysRevB.71.125103eng
dc.description.abstractThe Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spin-drag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.eng
dc.description.sponsorshipThe author gratefully acknowledges the hospitality of the Center for Nanoscience of the University of Science and Technology of China, Hefei, China, where much of this work was completed, and support from NSF Grant No. DMR-0313681.eng
dc.identifier.citationPhys. Rev. B 71, 125103 (2005) [5 pages]eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/7765eng
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectscattering mechanismseng
dc.subjectspin polarized transport in semiconductorseng
dc.subject.lcshElectron transporteng
dc.subject.lcshScattering (Physics)eng
dc.subject.lcshSpintronicseng
dc.subject.lcshPolarization (Nuclear physics)eng
dc.subject.lcshMagnetic semiconductorseng
dc.titleObserving the spin Coulomb drag in spin-valve deviceseng
dc.typeArticleeng


Files in this item

[PDF]

This item appears in the following Collection(s)

[-] Show simple item record