dc.contributor.author | Vignale, Giovanni, 1957- | eng |
dc.date.issued | 2005 | eng |
dc.description | URL:http://link.aps.org/doi/10.1103/PhysRevB.71.125103
DOI:10.1103/PhysRevB.71.125103 | eng |
dc.description.abstract | The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spin-drag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device. | eng |
dc.description.sponsorship | The author gratefully acknowledges the hospitality of the Center for Nanoscience of the University of Science and Technology of China, Hefei, China, where much of this work
was completed, and support from NSF Grant No. DMR-0313681. | eng |
dc.identifier.citation | Phys. Rev. B 71, 125103 (2005) [5 pages] | eng |
dc.identifier.issn | 1098-0121 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/7765 | eng |
dc.language | English | eng |
dc.publisher | American Physical Society | eng |
dc.relation.ispartofcollection | University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications | eng |
dc.subject | scattering mechanisms | eng |
dc.subject | spin polarized transport in semiconductors | eng |
dc.subject.lcsh | Electron transport | eng |
dc.subject.lcsh | Scattering (Physics) | eng |
dc.subject.lcsh | Spintronics | eng |
dc.subject.lcsh | Polarization (Nuclear physics) | eng |
dc.subject.lcsh | Magnetic semiconductors | eng |
dc.title | Observing the spin Coulomb drag in spin-valve devices | eng |
dc.type | Article | eng |