High field and Coulomb interaction effects on spin injection in degenerate semiconductors
Abstract
We analyse the combined effect of high electric field and Coulomb interaction on spin transport in semiconductors. We concentrate on the experimentally relevant regime characterized by T lap TF (intermediate to degenerate), where TF = εF/kB is the Fermi temperature. By the careful analysis of the downstream spin diffusion length Ld, we (i) demonstrate that in this regime carrier-carrier interactions become important and (ii) introduce the 'semiconductor degenerate' regime, in which spin-transport properties of a degenerate semiconductor are substantially modified by applying a modest electric field. Finally we discuss how the electric field and Coulomb interaction concur to influence the magnetoresistance of a trilayer system.
Citation
Irene D'Amico and Giovanni Vignale 2004 Semicond. Sci. Technol. 19 S383