• Characterization of porous low-k films using variable angle spectroscopic ellipsometry 

    Othman, Maslin, 1977-; Lubguban, J. A.; Lubguban, Arnold A.; Gangopadhyay, Shubhra; Miller, R. D.; Volksen, W.; Kim, H.-C. (American Institute of Physics, 2006)
    Variable angle spectroscopic ellipsometry (VASE™) is used as a tool to characterize properties such as optical constant, thickness, refractive index depth profile, and pore volume fraction of single and bilayer porous low-k ...
  • Crystallization of amorphous silicon by self-propagation of nanoengineered thermites 

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu, 1974-; Gao, Yuanfang; Apperson, Steven J., 1982-; Shende, Rajesh; Guha, Suchi; Arif, Mohammad, 1974-; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra (American Institute of Physics, 2007)
    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma ...