• Initial growth of interfacial oxide during deposition of HfO2 on silicon 

    Choi, K.; Temkin, H.; Harris, H.; Gangopadhyay, Shubhra; Xie, L.; White, Marvin (American Institute of Physics, 2004-05)
    Interfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried ...