Spin diffusion in doped semiconductors: The role of Coulomb interactions

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Spin diffusion in doped semiconductors: The role of Coulomb interactions

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/7919

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Title: Spin diffusion in doped semiconductors: The role of Coulomb interactions
Author: D'Amico, Irene; Vignale, Giovanni, 1957-
Date: 2001-06-05
Publisher: EDP Sciences
Citation: I. D'Amico and G. Vignale 2001 Europhys. Lett. 55 566
Abstract: We examine the effect of Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.
URI: http://hdl.handle.net/10355/7919
ISSN: 0295-5075

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