Spin diffusion in doped semiconductors: The role of Coulomb interactions

dc.contributor.author	D'Amico, Irene	eng
dc.contributor.author	Vignale, Giovanni, 1957-	eng
dc.date.issued	2001	eng
dc.description	doi: 10.1209/epl/i2001-00453-y	eng
dc.description.abstract	We examine the effect of Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.	eng
dc.description.sponsorship	We gratefully acknowledge support from NSF grants DMR-9706788 and DMR-0074959.	eng
dc.identifier.citation	I. D'Amico and G. Vignale 2001 Europhys. Lett. 55 566	eng
dc.identifier.issn	0295-5075	eng
dc.identifier.uri	http://hdl.handle.net/10355/7919	eng
dc.language	English	eng
dc.publisher	EDP Sciences	eng
dc.relation.ispartofcollection	University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications	eng
dc.subject.lcsh	Condensed matter	eng
dc.subject.lcsh	Semiconductors	eng
dc.title	Spin diffusion in doped semiconductors: The role of Coulomb interactions	eng
dc.type	Article	eng

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