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Unipolar spin diodes and transistors

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http://hdl.handle.net/10355/7923
dc.contributor.authorFlatte, M. E.eng
dc.contributor.authorVignale, Giovanni, 1957-eng
dc.date.issued2000eng
dc.descriptiondoi:10.1063/1.1348317 http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000009001273000001&idtype=cvips&prog=normal&doi=10.1063/1.1348317eng
dc.description.abstractUnipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.eng
dc.description.sponsorshipG.V. acknowledges support from NSF Grant Nos. DMR-9706788 and DMR-0074959. M.E.F. acknowledges support from NSF Grant No. ECS-0000556.eng
dc.identifier.citationAppl. Phys. Lett. 78, 1273 (2001)eng
dc.identifier.issn0003-6951eng
dc.identifier.urihttp://hdl.handle.net/10355/7923eng
dc.languageEnglisheng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectspin polarized transport in semiconductorseng
dc.subjectreprogrammable magnetic logiceng
dc.subjectspin polarized field effect transistorseng
dc.subjectmagnetic field sensors using spin polarized transporteng
dc.subject.lcshSpintronicseng
dc.subject.lcshPolarization (Nuclear physics)eng
dc.subject.lcshSemiconductorseng
dc.subject.lcshField-effect transistorseng
dc.subject.lcshMagnetic fieldseng
dc.titleUnipolar spin diodes and transistorseng
dc.typeArticleeng


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