[-] Show simple item record

dc.contributor.authorGuha, Suchieng
dc.contributor.authorCai, Qingsheng, 1966-eng
dc.contributor.authorChandrasekhar, Meeraeng
dc.contributor.authorChandrasekhar, Holalkere R.eng
dc.contributor.authorHyunjung, Kimeng
dc.contributor.authorAlvarenga, A. D.eng
dc.contributor.authorVogelgesang, R.eng
dc.contributor.authorRamdas, A. K.eng
dc.contributor.authorMelloch, M. R.eng
dc.date.issued1998eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.58.7222 DOI:10.1103/PhysRevB.58.7222eng
dc.description.abstractThe temperature and pressure dependence of type-I and -II transitions from photoluminescence (PL) spectra in a series of (GaAs)m/(AlAs)m superlattices show that the temperature dependence of energy bands can be described very well with a Bose-Einstein-type equation. From these measurements the parameters that describe the temperature dependence of excitonic transition energies and the corresponding broadening of the PL line are deduced. The pressure dependence of the PL linewidths of the type-I exciton as a function of pressure and temperature yield the intervalley deformation potential. Beyond the type-I-type-II crossover, the PL linewidth increases as a function of both pressure and temperature. The electron-phonon deformation potential for Γ-X scattering is found to be temperature dependent.eng
dc.description.sponsorshipWe thank S. Satpathy and S. Zollner for valuable discussions. One of us ~H.R.C.! acknowledges support by the NSF under Grant No. DMR-9633107. M.C. thanks the U.S. Army for support through Grant No. DAAL03-92-0381. The work at Purdue University was supported by the National Science Foundation: Materials Research Science and Engineering Center Grant Nos. DMR 94-00415 and DMR 93-03186.eng
dc.identifier.citationPhys. Rev. B 58, 7222-7229 (1998)eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/8157eng
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectIII-V semiconductorseng
dc.subject.lcshSemiconductors -- Characterizationeng
dc.subject.lcshDielectrics -- Optical propertieseng
dc.titlePhotoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature studyeng
dc.typeArticleeng


Files in this item

[PDF]

This item appears in the following Collection(s)

[-] Show simple item record